LNA100M2GBT is a high-linearity, ultra low noise amplifier in a small 1-1/8”x15/16”x0.59” shielded RF enclosure (PN: 6UED2W6S1P2). At 900 MHz, the amplifier typically provides 20 dB gain, +36 dBm OIP3 at a 68 mA bias setting, and 0.45 dB noise figure. The LNA can be biased from a single supply +3.3V to +5V. The DC power is fed through output SMA connector. It combines Bias Tee and LNA in one with DC Power via RF output port.

Listed pictures include Product Picture and S Parameter from 100M to 2GHz. SKU#: AK20_002K. This LNA includes the RF Enclosure as shown in picture.

Proudly Made in USA by Lotus Communication Systems, INC. in Massachusetts.

Features

• Frequency Range: 100 MHz to 2 GHz
• Noise Figure: typical 0.45 dB @ 900MHz
• Gain: 20 dB Gain at 900 MHz
• Output P1dB: +22 dBm CW
• Output IP3: +36 dBm
• DC Voltage: +3.3 to +5V
• Operating Current: 68 mA
• Stainless Steel SMA Female Connector
• High Quality RO4350 RF PCB (very low loss and high thermal performance)
• ROHS Compliant

Applications

• Repeaters/DAS
• Mobile Infrastructure
• LTE/WCDMA/CDMA/GSM
• General Purpose Wireless
• SDR & Ham Radio
• Test Instrumentation

Resources

LNA100M2GBT Datasheet