Each board is hand-made and fully tested before shipping.

You can use one module as a simple chopper switch to enable you to use in a flyback converter.

You can combine multiple modules together to form:

Bidirectional switch (2 modules required)

Two N-channel MOSFETs are externally connected back-to-back (in a common-source configuration or a common-drain configuration) when a load switch using a gate drive IC needs a function for blocking the current flowing into the load switch in the reverse direction.

Half Bridge (2 modules required)

A half-bridge converter is a type of DC-DC converter that, like flyback and forward converters, can supply an output voltage either higher or lower than the input voltage and provide electrical isolation via a transformer. Although more complex than a flyback or forward converter, the half-bridge converter design can yield higher output power (potentially up to 500W) and use parts that are smaller and less expensive.

H bridge (4 modules required)

An H-bridge is an electronic circuit that switches the polarity of a voltage applied to a load. These circuits are often used in robotics and other applications to allow DC motors to run forwards or backwards.

Features

• Optimized PCB layout to reduce stray inductance and capacitance, especially in the MOSFET gate loop
• 6 layer FR-4 TG155 PCB with 2oz copper traces
• Additional solder added to bottom traces for higher current carrying capacity and heat dissipation
• ENIG surface finish
• Supports dual inputs (inverting and non-inverting) for PWM control
• Supports latest TO-247 4-pin SiC MOSFETs
• In-rush protection using NTC fuse
• Over current protection using resettable PTC fuse
• Powerful heatsinks
• Aluminium oxide insulation pads (excellent electrical insulator & excellent thermal conductor)

Specifications

• Infineon 1ED3124MU12H Isolated Gate Driver
• Recom R12P22005D +20V/-5V Isolated DC/DC Converter
• Ohmite C40-058-AE Heatsinks
• 2.5mm DC Power Jack

Infineon 1ED3124MU12H

EiceDRIVER™ Compact single-channel isolated gate driver with 14 A typical sinking and sourcing peak output current in DSO-8 wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.

• For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
• 2300 V functional offset voltage capable for selected applications
• Galvanically isolated coreless transformer gate driver
• 14 A typical sinking and sourcing peak output current
• 90 ns propagation delay with 30 ns input filter
• UL 1577 (planned) VISO = 6.8 kV (rms) for 1 s, 5.7 kV (rms) for 1 min